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The potential difference between the base and the collector Vcb in a pnp transistor in saturation region is ________(a) -0.2 V(b) -0.5V(c) 0.2 V(d) 0.5 VThis question was addressed to me by my school principal while I was bunking the class.The origin of the question is BJT Circuits at DC topic in portion Bipolar Junction Triodes (BJTs) of Electronic Devices & Circuits

Answer»

The correct ANSWER is (b) -0.5V

Easiest EXPLANATION: The VALUE of Vcb is -0.5V for a PNP transistor and 0.5V for an NPN transistor.



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