The width of forbidden gap in silicon crystal is 1.1eV. When the crystal is converted into n-type semiconductor, then the distance of fermi energy level from conduction band is

The width of forbidden gap in silicon crystal is 1.1eV. When the cryst

1.	The width of forbidden gap in silicon crystal is 1.1eV. When the crystal is converted into n-type semiconductor, then the distance of fermi energy level from conduction band is
Answer» EQUAL to 0.55eV equal to 1.leV less than 0.55eV greater than 0.55eV Answer :C

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The width of forbidden gap in silicon crystal is 1.1eV. When the crystal is converted into n-type semiconductor, then the distance of fermi energy level from conduction band is

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