1.

What amount of inpurity of atomic density in added toform N-type semiconductor in Ge semiconductor of conductivity sigma is 5Omega^(-1)cm^(-1) Mobility of electron in N-type semiconductoris 3900 cm^(2)V^(-1)s^(-1). Ignore conductivitydue to hole. (e=1.6xx10^(-19)C)

Answer»

`2.25xx10^(21)m^(-3)`
`4.007xx10^(21)m^(-3)`
`8013xx10^(21)m^(-3)`
`8.013xx10^(21)m^(-3)`

Solution :`8.013xx10^(21)m^(-3)`
`sigma=5Omega^(-1)cm^(-1)=500Omega^(-1)m^(-1)`
`mu_(e )=3900cm^(2)V^(-1)s^(-1)=0.39m^(2)V^(-1)s^(-1)`
Now `sigma=en_(e )mu_( e)`
`therefore n_(e )=(sigma)/(emu_(e ))`
`therefore n_(e )=(500)/(1.6xx10^(-19)xx0.39)`
`therefore n_(e )~~8.013xx10^(21)m^(-3)`


Discussion

No Comment Found

Related InterviewSolutions