InterviewSolution
Saved Bookmarks
InterviewSolution
| 1. |
What amount of inpurity of atomic density in added toform N-type semiconductor in Ge semiconductor of conductivity sigma is 5Omega^(-1)cm^(-1) Mobility of electron in N-type semiconductoris 3900 cm^(2)V^(-1)s^(-1). Ignore conductivitydue to hole. (e=1.6xx10^(-19)C) |
| Answer» <html><body><p>`<a href="https://interviewquestions.tuteehub.com/tag/2-283658" style="font-weight:bold;" target="_blank" title="Click to know more about 2">2</a>.25xx10^(21)m^(-3)` <br/>`4.007xx10^(21)m^(-3)` <br/>`8013xx10^(21)m^(-3)` <br/>`8.013xx10^(21)m^(-3)` </p>Solution :`8.013xx10^(21)m^(-3)`<br/> `sigma=5Omega^(-1)cm^(-1)=500Omega^(-1)m^(-1)` <br/> `mu_(e )=3900cm^(2)<a href="https://interviewquestions.tuteehub.com/tag/v-722631" style="font-weight:bold;" target="_blank" title="Click to know more about V">V</a>^(-1)s^(-1)=0.39m^(2)V^(-1)s^(-1)` <br/> Now `sigma=en_(e )mu_( e)` <br/> `therefore n_(e )=(sigma)/(emu_(e ))` <br/> `therefore n_(e )=(500)/(1.6xx10^(-19)xx0.39)` <br/> `therefore n_(e )~~8.013xx10^(21)m^(-3)`</body></html> | |