Saved Bookmarks
| 1. |
What Is The Effect Of Temperature On The Reverse Saturation Current Of A Diode? |
|
Answer» REVERSE saturation current, theoretically , increases by 8% per OC for silicon and 11% per oC for germanium. But from experimental data it is found that that reverse saturation current increases by 7% per oC for both silicon and germanium. This is because a surface leakage current COMPONENT of reverse saturation current is independent of temperature. Since (1.07)10 =2.0 (approx.), the reverse saturation current approximately doubles for every 10oC RISE in temperature. Reverse saturation current, theoretically , increases by 8% per oC for silicon and 11% per oC for germanium. But from experimental data it is found that that reverse saturation current increases by 7% per oC for both silicon and germanium. This is because a surface leakage current component of reverse saturation current is independent of temperature. Since (1.07)10 =2.0 (approx.), the reverse saturation current approximately doubles for every 10oC rise in temperature. |
|