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When a p-type semiconductor is brought into a close contact with n-type semiconductor, we get a p-n junction with a barrier potential 0.4V and the width ofdepletion region is 4.0 xx 10^(-7)m. this p-n junction is forwaed biased with a battery of voltage 3V adn negligible internal resistance, in series with a resistance of resistance R, ideal milliammeter and key K as shown in Fig. Wattage of diode is |
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Answer» 0.060 W `=0.4xx20xx10^(-3)=0.008 W` |
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