Which among the below mentioned parameters of transistors is/are likely to get affected or exhibit/s variations due to an increase in temperature?(a) Base-to-Emitter voltage (VBE)(b) Current Gain (βdc)(c) Base-to-Emitter voltage & Current Gain(d) Forward resistanceI had been asked this question during an internship interview.My question is taken from Thermistor and Sensistor Compensation topic in chapter Transistor Biasing and Thermal Stabilization of Electronic Devices & Circuits

Which among the below mentioned parameters of transistors is/are likel

1.	Which among the below mentioned parameters of transistors is/are likely to get affected or exhibit/s variations due to an increase in temperature?(a) Base-to-Emitter voltage (VBE)(b) Current Gain (βdc)(c) Base-to-Emitter voltage & Current Gain(d) Forward resistanceI had been asked this question during an internship interview.My question is taken from Thermistor and Sensistor Compensation topic in chapter Transistor Biasing and Thermal Stabilization of Electronic Devices & Circuits
Answer» The correct choice is (c) Base-to-Emitter voltage & Current Gain Explanation: In a transistor, the junction temperature MAINLY depends on the quantity of current passing through it. As the temperature increases, various parameters of transistors exhibit variations. These parameters INCLUDE; base-to-emitter voltage (VBE), current gain (βdc) & reverse saturation current (IICBO). Due to an increase in temperature, base-to-emitter voltage (VBE) decreases and EVENTUALLY tends to change the Q-point. Since the current gain is a function of collector current (Ic), VARIATION in current gain also ultimately varies collector current.

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