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Which of the following is true for a typical active region of an npn transistor?(a) The potential difference between the emitter and the collector is less than 0.5 V(b) The potential difference between the emitter and the collector is less than 0.4 V(c) The potential difference between the emitter and the collector is less than 0.3 V(d) The potential difference between the emitter and the collector is less than 0.2 VThis question was addressed to me during an interview.My question is taken from BJT Circuits at DC topic in portion Bipolar Junction Triodes (BJTs) of Electronic Devices & Circuits

Answer»

Right option is (c) The POTENTIAL DIFFERENCE between the emitter and the COLLECTOR is less than 0.3 V

The explanation: Most commonly used transistors have VCE less than 0.4 V for the active region.



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