A potential difference of 2V is applied between the opposite faces of a Ge crystal plate of area `1cm^(2)` and thickness 0.5 mm. if the concentration of electrons in Ge is `2xx10^(19)//m^(3)` and mobilities of electrons and holes are 0.36 `(m^(2))/("volt-sec") and 0.14(m^(2))/("volt-sec")` respectivity, then the current flowing through the plate will be-A. 0.25 AB. 0.45 AC. 0.56 AD. 0.64 A

A potential difference of 2V is applied between the opposite faces of

1.	A potential difference of 2V is applied between the opposite faces of a Ge crystal plate of area `1cm^(2)` and thickness 0.5 mm. if the concentration of electrons in Ge is `2xx10^(19)//m^(3)` and mobilities of electrons and holes are 0.36 `(m^(2))/("volt-sec") and 0.14(m^(2))/("volt-sec")` respectivity, then the current flowing through the plate will be-A. 0.25 AB. 0.45 AC. 0.56 AD. 0.64 A
Answer» Correct Answer - D

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