Related InterviewSolutions

• The `V-I` characteristic of a silicon diode is shown in the Fig. Calculate the resistance of the diode at (a) `I_(D) = 15 mA` and (b) `V_(D) = -10 V`. .
• Region which have no free electron and holes in P-N junction isA. x-regionB. p-regionC. depletion regionD. none of these
• In an n-p-n circuit transistor, the collector current is 10 mA. If 80% electrons emitted reach the collector, thenA. the emitter current will be 7.5 mAB. the emitter current will be 12.5 mAC. the base current will be 3.5 mAD. the base current will be 1.5 mA
• If a change of `100 mu A` in the base current of an `n-p-n` transistor in `CE` causes a change of `10 mA` in the collector current, the `ac` current gain of the transistor isA. 50B. 100C. 200D. 150
• If `alpha and beta` are the current gain in the CB and CE configurations respectively of the transistor circuit, then `(beta-alpha)/(alphabeta)=`A. zeroB. 1C. 2D. 5
• In an n-p-n transistor `10^(10)` electrons enter the emitter in `10^(-6)`s. If 2% of the electrons are lost in the base, find the current transfer ratio and the current amplification factor.A. 0.02B. 7C. 33D. 4.9
• The transfer characteristics of a base biased transistor has the operation regions, namely, cutoff, active region and saturation region. For using the transistor as an amplifier it has to operate in theA. active regionB. cutoff regionC. saturation regionD. cutoff and saturation
• When the voltage drop across a `p.n` junction diode is increased from `0.65V` to `0.70V`, the change in the diode current is `5mA`. What is the dynamic resistance of the diode?A. `5 Omega`B. `10 Omega`C. `20 Omega`D. `25 Omega`
• A potential barrier of 0.3 V exists across a p-n junction. If the depletion region is 1 `mu`m wide, what is the intensity of electric field in this region?A. `2xx10^5 V m^(-1)`B. `3xx10^5 V m^(-1)`C. `4xx10^5 V m^(-1)`D. `5xx10^5 V m^(-1)`
• In Fig . `V_(0)` is the potential barrier across a p-n junction, when no battery is connected across the junction A. 1 and 3 both correspond to forward bias of junctionB. 3 corresponds to forward bias of junction and 1 corresponds to reverse bias of junctionC. 1 corresponds to forward bias and 3 corresponds to reverse bias of junction.D. 3 and 1 both correspond to reverse bias of junction.