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At room temperature, what is the possible value for the mobility of electrons in the inversion layer of a silicon n-channel MOSFET?(a) 450 cm^2/v-s(b) 1350 cm^2/v-s(c) 1800 cm^2/v-s(d) 3600cm^2/v-sI have been asked this question in final exam.This intriguing question comes from The Insulated-Gate FET(MOSFET) topic in chapter Field-Effect Transistors of Electronic Devices & Circuits

Answer» CORRECT answer is (B) 1350 cm^2/v-s

Easy explanation: The mobility of electron in s-type Si semiconductor is 1350 cm^2/v-s.

In INVERSION LAYER mobility of electron is 1350 cm^2/v-s.


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