InterviewSolution
Saved Bookmarks
| 1. |
Full form of IGBT is ___________(a) Insulated gate bipolar transistor(b) Insulated gate bipolar transducer(c) Insulator gate bidirectional transducer(d) Insulated gate bidirectional transistorThis question was addressed to me in my homework.I'm obligated to ask this question of Solid-State Switching Circuits in portion Introduction to Solid-State Switching Circuits of Electric Drives |
|
Answer» CORRECT option is (a) INSULATED gate bipolar transistor The explanation is: Full FORM of IGBT is Insulated gate bipolar transistor. It is a 3-terminal device, bipolar in nature. It can be used as a SWITCH. |
|