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In a MOSFET operating in a saturation region, the channel length modulation effect causes(a) An increase in gate-source capacitance(b) Decrease in Trans conductance(c) Decrease in the unity gain cut off(d) Decrease in the output impedanceI have been asked this question in an interview for job.This is a very interesting question from The Insulated-Gate FET(MOSFET) in portion Field-Effect Transistors of Electronic Devices & Circuits

Answer»

The CORRECT answer is (d) DECREASE in the output impedance

The EXPLANATION is: Under channel LENGTH modulation, 1/rds=dIds/dVds=dIDsat=1/ro

Hence it decreases from ∞ to 1/ro.



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