In the Hall Effect, the electric field is in x direction and the velocity is in y direction. What is the direction of the magnetic field?(a) X(b) Y(c) Z(d) XY planeThis question was addressed to me in an interview for internship.I'm obligated to ask this question of The Hall Effect in section Conduction in Semiconductors of Electronic Devices & Circuits

In the Hall Effect, the electric field is in x direction and the veloc

1.	In the Hall Effect, the electric field is in x direction and the velocity is in y direction. What is the direction of the magnetic field?(a) X(b) Y(c) Z(d) XY planeThis question was addressed to me in an interview for internship.I'm obligated to ask this question of The Hall Effect in section Conduction in Semiconductors of Electronic Devices & Circuits
Answer» The CORRECT choice is (c) Z For EXPLANATION I would say: The HALL EFFECT satisfies the Lorentz’s Force which is E=vxB So, the direction of the VELOCITY, electric field and magnetic field should be perpendicular to each other.

Discussion

No Comment Found

Related InterviewSolutions

Which of the following represents the continuity equation?(a) dp/dt=-(p-p0)/τp+Dp(d^2p/dx^2)-µpd(ρϵ)/dx(b) dp/dt=-(p-p0)/τp-Dp(d^2p/dx^2)-µpd(ρϵ)/dx(c) dp/dt=-(p-p0)/τp+Dp(d^2p/dx^2)+µpd(ρϵ)/dx(d) dp/dt=(p-p0)/τp-Dp(d^2p/dx^2)-µpd(ρϵ)/dxI have been asked this question during an interview for a job.My question is from The Continuity Equation in division Conduction in Semiconductors of Electronic Devices & Circuits
Where will be the position of the Fermi level of the n-type material when ND=NA?(a) Ec(b) Ev(c) Ef(d) EfiI have been asked this question during an online interview.Origin of the question is Fermi Level in a Semiconductor having Impurities topic in section Conduction in Semiconductors of Electronic Devices & Circuits
What is the SI unit of conductivity?(a) Ωm(b) (Ωm)-1(c) Ω(d) mThis question was posed to me by my college professor while I was bunking the class.The question is from Conductivity of a Semiconductor in portion Conduction in Semiconductors of Electronic Devices & Circuits
Do the Fermi energy level changes in a semiconductor?(a) True(b) FalseThis question was posed to me in my homework.I'd like to ask this question from Charge Densities in a Semiconductor impurities in chapter Conduction in Semiconductors of Electronic Devices & Circuits
What is the range of the carrier lifetime?(a) Nanoseconds to microseconds(b) Nanoseconds to hundreds of microseconds(c) Nanoseconds to tens of microseconds(d) Nanoseconds to millisecondsThe question was asked by my school teacher while I was bunking the class.This question is from Carrier Life time in section Conduction in Semiconductors of Electronic Devices & Circuits
Identify the correct condition for a semiconductor to be electrically neutral.(a) Nd+p=Na+n(b) Nd-p=Na+n(c) Nd+p=Na-n(d) Nd-p=Na-nI have been asked this question in an interview for job.My question is from Charge Densities in a Semiconductor impurities topic in chapter Conduction in Semiconductors of Electronic Devices & Circuits
At what temperature the donor states are completely ionized?(a) 0 K(b) ROOM(c) 300K(d) 900KI got this question during a job interview.The query is from Donor and Acceptor impurities in section Conduction in Semiconductors of Electronic Devices & Circuits
Which of the following expression represents the correct formula for the conductivity in an intrinsic material?(a) ρ=e(μn+μp )ni(b) σ=e(μn+μp )ni(c) σ=1/(e(μn+μp )ni)(d) ρ=1/(e(μn+μp )ni)I got this question in unit test.My doubt is from Conductivity of a Semiconductor in chapter Conduction in Semiconductors of Electronic Devices & Circuits
The change in the carrier density is due to(a) Flow of incoming flux(b) Flow of outgoing flux(c) Difference of flow between incoming and outgoing flux(d) Difference of flow between incoming and outgoing flux plus generation and minus recombinationI had been asked this question by my school principal while I was bunking the class.My query is from The Continuity Equation topic in portion Conduction in Semiconductors of Electronic Devices & Circuits
From the above equation, assuming the same values for the for ni, n= p and T. Given that p0=10^5cm^-3. Calculate the quasi-fermi energy level in eV?(a) 0.1985(b) 0.15(c) 0.1792(d) 0.1The question was asked in an interview.The query is from Fermi Level in a Semiconductor having Impurities in section Conduction in Semiconductors of Electronic Devices & Circuits

Discussion

No Comment Found

Related InterviewSolutions

Reply to Comment