Let `n_(p) and n_(e)` be the number of holes and conduction electrons respectively in a semiconductor. Then,A. `n_(p) gt N_(e)` in an intrinsic semiconductor, `I lt I_(p)+I_(e)`B. `n_(p)=n_(e)` in an extrinsic semiconductor, `I gt I_(p) +I_(e)`C. `n_(p) =n_(e)` in an intrinsic semiconductor, `I=I_(p)+I_(e)`D. `n_(p) gt n_(e)` in an intrinsic semiconductor, `I=0`

Let `n_(p) and n_(e)` be the number of holes and conduction electrons

1.	Let `n_(p) and n_(e)` be the number of holes and conduction electrons respectively in a semiconductor. Then,A. `n_(p) gt N_(e)` in an intrinsic semiconductor, `I lt I_(p)+I_(e)`B. `n_(p)=n_(e)` in an extrinsic semiconductor, `I gt I_(p) +I_(e)`C. `n_(p) =n_(e)` in an intrinsic semiconductor, `I=I_(p)+I_(e)`D. `n_(p) gt n_(e)` in an intrinsic semiconductor, `I=0`
Answer» Correct Answer - C In intrinsic semiconductors, the number of free electron, `n_(e)` is equal to the number of holes, `n_(h)`. That is `n_(e)=n_(h)=n_(i)`, where `n_(i)` is called intrinsic carrier concentration, `I=I_(p)+I_(e)`.

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