Pure Si at 300 K has equal electron (ni) and hole concentration (p) of 1.5 X 10^16 m^-3. Doping by indium increases p to 4.5 X 10^22 m^-3. What is n in the doped silicon?(a) 4.5 X 10^9 m^-3(b) 4.5 X 10^22 m^-3(c) 5 X 10^9 m^-3(d) 5 X 10^22 m^-3

Pure Si at 300 K has equal electron (ni) and hole concentration (p) of

1.	Pure Si at 300 K has equal electron (ni) and hole concentration (p) of 1.5 X 10^16 m^-3. Doping by indium increases p to 4.5 X 10^22 m^-3. What is n in the doped silicon?(a) 4.5 X 10^9 m^-3(b) 4.5 X 10^22 m^-3(c) 5 X 10^9 m^-3(d) 5 X 10^22 m^-3
Answer» The correct choice is (c) 5 X 10^9 m^-3 Best explanation: Here, ni = 1.5 X 10^16 m^-3, p = 4.5 X 10^22 m^-3 We know, np = ni^2 n = ni^2/p = 5 X 10^9 m^-3.

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Pure Si at 300 K has equal electron (ni) and hole concentration (p) of 1.5 X 10^16 m^-3. Doping by indium increases p to 4.5 X 10^22 m^-3. What is n in the doped silicon?(a) 4.5 X 10^9 m^-3(b) 4.5 X 10^22 m^-3(c) 5 X 10^9 m^-3(d) 5 X 10^22 m^-3

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