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Statement 1: Doping concentration is maximum in emitter in transistor. Statement 2: Maximum number of electrons flows from emitter to base in n-p-n transistor.A. Both statement-1 and statement-2 are true, and statement-2 is the correct explanation of statement 1.B. Both statement-1 and statement-2 are true but statement-2 is not the correct explanation of statement-2C. Statement-1 is true but statement-2 is false.D. Statement-1 is false but statement-2 true. |
| Answer» Correct Answer - B | |