Related InterviewSolutions

• The depletion layer in diode is `1 mum` wide and the knee potential is `0.6 V`, then the electric field in the depletion layer will beA. `5xx10^(6)Vm^(-1)`B. `5xx10^(-7)Vm^(-1)`C. `5xx10^(5)Vm^(-1)`D. `5xx10^(-1)Vm^(-1)`
• The depletion layer in diode is `1 mum` wide and the knee potential is `0.6 V`, then the electric field in the depletion layer will beA. zeroB. `0.6Vm^(-1)`C. `6xx10^(4) V//m`D. `6xx10^(5) V//m`
• The knee voltage of a p-n junction diode is 0.8 V and the width of the depletion layer is `2muA` . The electric field in the depletion layer isA. 4 MV/mB. 0.4 MV/mC. 4 KV/mD. 0.4 KV/m
• The junction diode in the following circuit requires a minimum current of `1 mA` to be above the knee point `(0.7 V)` of its `I-V` characterstic curve. The voltage across the diode is independent of current above the knee point. If `V_(B)=5 V`, then the maximum value of `R` so that the voltage is above the knee point, will be A. `4.3 k Omega`B. `860 k Omega`C. `4.3 k Omega`D. `860 Omega`
• In the study of transistor as an amplifier , `alpha=l_C/l_E` and `beta=I_C/I_B` where `I_C,I_E` and `I_B` are the collector, emitter and base currents respectively. The correct relation between `alpha` and `beta` is given byA. `beta=(1-alpha)/alpha`B. `beta=alpha/(1-alpha)`C. `beta=(1+alpha)/alpha`D. `beta=alpha /(1+alpha )`
• A silicon diode is connected to a load resistance `R_(L)` as shown in the figure. If `V_(in)=15V` and `R_(L)=10kOmega` (a) If barrier voltage, `V_(B)=0.7V` then calculate (i) output voltage across `R_(L)` (ii) current in diode and ltbRgt (iii) forward resistance. (b) If diode is assumed ideal, then what will be (i) output voltage and (ii) output current in diode?
• For the transistor circuit shown in figure , evaluate `V_E , R_B and R_E`. Given `I_C = 1 mA`, ` V_(CE) = 3V , V_(BE) = 0.5 V , V_(CC )= 12 V and beta = 1000`
• (i) calculate the value of output voltage `V_(0)` and current `I` if silicon diode and germanium diode conduct at `0.7V` and `0.3 V` respectively. Fig. (ii) If now germanium diode is cinnected to `12 V` in reverse polarity, find new values of `V_(0)` and `I`.
• The emitter of transistor is doped the heaviest because itA. receives the inputB. is supplier of charge carriersC. dissipates minimum powerD. should have low resistance
• A device whose one end is connected to `-ve` terminal and other end connected to `+ve` terminal. If both ends are interchanged with suppy then current is not flowing then device will be-A. P-N junctionB. TransistorC. Zener diodeD. Triode