The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon `P-N` junction areA. drift in forward bias, diffusion in reverse biasB. diffusion in forward bias, drifft in reverse biasC. diffusion in both forward and reverse biasD. drift in both forward and reverse bias

The dominant mechanisms for motion of charge carriers in forward and r

1.	The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon `P-N` junction areA. drift in forward bias, diffusion in reverse biasB. diffusion in forward bias, drifft in reverse biasC. diffusion in both forward and reverse biasD. drift in both forward and reverse bias
Answer» Correct Answer - B In forward bias, diffusion current increases, drift current remains almost same, net current is due to diffusion. In reverse bias, diffusion current decrease, net current (nwgligible small)` is due to drift.

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The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon `P-N` junction areA. drift in forward bias, diffusion in reverse biasB. diffusion in forward bias, drifft in reverse biasC. diffusion in both forward and reverse biasD. drift in both forward and reverse bias

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