1.

The threshold voltage of an n-channel MOSFET can be controlled by which of the following parameter?(a) Increasing the channel dopant concentration(b) Reducing the channel dopant concentration(c) Reducing the gate-oxide thickness(d) Reducing the channelI had been asked this question during a job interview.This interesting question is from The Insulated-Gate FET(MOSFET) in division Field-Effect Transistors of Electronic Devices & Circuits

Answer»

The correct answer is (B) Reducing the CHANNEL dopant CONCENTRATION

For EXPLANATION: The THRESHOLD voltage of n-channelMOSFET can be increased by reducing the channel dopant concentration or by increasing the oxide thickness.



Discussion

No Comment Found

Related InterviewSolutions