Which of the following is correct, about doping in a transistor ?A. Emitter is lightly doped, collector is heavily doped and base is moderately dopedB. Emitter is lightly doped, collector is moderately doped and base is heavily dopedC. Emitter is heavily doped, collector is lightly doped and base is moderately dopedD. Emitter is heavily doped, collector is moderately doped and base is lightly doped

Which of the following is correct, about doping in a transistor ?A. Em

1.	Which of the following is correct, about doping in a transistor ?A. Emitter is lightly doped, collector is heavily doped and base is moderately dopedB. Emitter is lightly doped, collector is moderately doped and base is heavily dopedC. Emitter is heavily doped, collector is lightly doped and base is moderately dopedD. Emitter is heavily doped, collector is moderately doped and base is lightly doped
Answer» Correct Answer - D Emitter is always forward biased w.r.t. base, so that it can supply a large number of majority carriers. The emitter is heavily doped so that it can inject a large number of charge carriers (electrons or holes) into the base. The base is lightly doped and very thin, it passes most of the emitter injected charge carriers to the collector. The collector is moderately doped.

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