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Which of the following methods take impurity variation method for transistor construction?(a) alloy type diffusion(b) grown junction type(c) epitaxial type(d) mesa typeI had been asked this question in unit test.My query is from Transistor Construction topic in section Transistor Characteristics of Electronic Devices & Circuits

Answer»

The correct choice is (b) grown junction TYPE

The explanation: In IMPURITY variation method, the impurity content of the SEMICONDUCTOR is altered in its type as WELL as the quantity. For example, in making NPN germanium grown junction transistor, a small type of N type impurity is added to molten germanium and the crystal growth is started.



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