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Which one of the following statements is false ?A. Pure Si doped with trivalent impurities gives a p-type semiconductorB. Majority carriers in a n-type semiconductor are holesC. Minority carriers in a p-type semiconductor are electronsD. The resistance of intrinsic semiconductor decreases with increase of temperature |
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Answer» Correct Answer - B p-type semiconductor are obtained by adding a small amount of trivalent impurity to a pure sample of semiconductor (Ge). Majority charge carriers-holes Minority charge carriers-electrons n-type semiconductor are obtained by adding a small amount of pentavalent impurity to a pure sample of semiconductor (Ge). Majority charge carriers-electrons The resistance of intrinsic semiconductors decreases with increase of temperature. |
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