Explore topic-wise InterviewSolutions in .

This section includes InterviewSolutions, each offering curated multiple-choice questions to sharpen your knowledge and support exam preparation. Choose a topic below to get started.

201.

The communication between memory and its environment is achieved through ____________(a) Control lines(b) Data input/output lines(c) Address selection lines(d) All of the MentionedThis question was addressed to me in a job interview.Question is taken from Introduction of Memory Devices topic in portion Memory Devices of Digital Circuits

Answer»

Correct option is (d) All of the Mentioned

The explanation: FIRSTLY, the data input is NEEDED to transfer the information and it is passed through the ADDRESS lines and then controlled by control lines. The control lines are RESPONSIBLE for the timing and control of the signals sent and RECEIVED.

202.

The capacity of a memory unit is ____________(a) The number of binary input stored(b) The number of words stored(c) The number of bytes stored(d) All of the MentionedI had been asked this question during an interview.My question is from Introduction of Memory Devices in portion Memory Devices of Digital Circuits

Answer»

The correct option is (c) The NUMBER of bytes stored

The explanation: The total number of bytes that can be stored, is the MAXIMUM capacity of a memory UNIT. However, memory unit is the SMALLEST unit of a PROCESSOR.

203.

Each word stored in a memory location is represented by ____________(a) RAM(b) ROM(c) Storage class(d) AddressI have been asked this question in a national level competition.I want to ask this question from Introduction of Memory Devices in chapter Memory Devices of Digital Circuits

Answer» RIGHT option is (d) Address

Easy explanation: Each WORD stored in a MEMORY location is REPRESENTED by address. USUALLY, a word is a group of 16-bits or 2-bytes.
204.

The group of each 8-bit is called ____________(a) Nibble(b) Flag(c) Byte(d) WordI had been asked this question in an interview for job.The origin of the question is Introduction of Memory Devices in portion Memory Devices of Digital Circuits

Answer» CORRECT OPTION is (c) BYTE

Explanation: 1 byte = 8-bit, 4-bits = 1 NIBBLE and 16-bits = 1 word.
205.

The data stored in a group of bits is called ____________(a) Nibble(b) Word(c) Byte(d) AddressThis question was posed to me at a job interview.Enquiry is from Introduction of Memory Devices topic in portion Memory Devices of Digital Circuits

Answer»

Right choice is (B) Word

For explanation I would SAY: The DATA stored in a group of BITS is called word. Usually, a word is a group of 16-bits or 2-bytes.

206.

Each word consist of a sequence of ____________(a) Letters(b) Binary numbers(c) Hexadecimal numbers(d) Gray codesI had been asked this question in class test.My question comes from Introduction of Memory Devices topic in chapter Memory Devices of Digital Circuits

Answer»

The correct choice is (b) Binary numbers

Explanation: Each WORD consists of a SEQUENCE of 0s and 1s (i.e. binary numbers). USUALLY, a word is a GROUP of 16-bits or 2-bytes.

207.

To transfer the information from input to output and vice versa, the cells used are ____________(a) Storage cells(b) Data cells(c) Unit cells(d) Both data and unit cellsThe question was posed to me during an online exam.I would like to ask this question from Introduction of Memory Devices in section Memory Devices of Digital Circuits

Answer»

Correct choice is (a) STORAGE cells

Easy EXPLANATION: To transfer the information from input to OUTPUT and vice versa, the cells USED are called storage cells. The storage cells stores data in the form of binary information.

208.

A memory is a collection of ____________(a) Unit cells(b) Storage cells(c) Data cells(d) Binary cellsI got this question during an interview for a job.The query is from Introduction of Memory Devices topic in portion Memory Devices of Digital Circuits

Answer»

The correct ANSWER is (B) Storage cells

For explanation: A memory is a COLLECTION of storage cells with associated circuits needed to transfer INFORMATION.

209.

By which technology, semiconductor memories are constructed?(a) PLD(b) LSI(c) VLSI(d) Both LSI and VLSIThe question was asked in an interview for internship.I'm obligated to ask this question of Introduction of Memory Devices in division Memory Devices of Digital Circuits

Answer» CORRECT option is (d) Both LSI and VLSI

Best explanation: Generally, semiconductor memories are constructed using Large SCALE INTEGRATION (LSI) or Very Large Scale Integration (VLSI) because these are made up of NMOS, CMOS, BJT, etc.
210.

When two or more devices try to write data in a bus simultaneously, is known as ______________(a) Bus collisions(b) Address multiplexing(c) Address decoding(d) Bus contentionThis question was addressed to me in a job interview.My doubt is from Introduction of Memory Devices topic in section Memory Devices of Digital Circuits

Answer»

Correct CHOICE is (d) Bus contention

For explanation: Bus contention is an UNDESIRABLE state of the bus of a COMPUTER, in which more than one memory mapped device or the CPU is attempting to PLACE OUTPUT values onto the bus at once.

211.

Magnetic core is the digital memory in which data is stored magnetically in individual cores operated by __________(a) Up and down select wires(b) Row and column select wires(c) Serial and parallel select wires(d) Up and Serial select wiresI had been asked this question in an internship interview.I'd like to ask this question from Introduction of Memory Devices in portion Memory Devices of Digital Circuits

Answer» RIGHT answer is (b) Row and column select wires

For explanation: MAGNETIC core is the DIGITAL memory in which data is STORED MAGNETICALLY in individual cores operated by row and column select wires, with data obtained from sense wire.
212.

Magnetic drum is a storage medium using __________(a) The surface of a jumping magnetic drum(b) The surface of a rotating magnetic drum(c) The surface of a stopped magnetic drum(d) The surface of a moving magnetic drumThis question was addressed to me in a job interview.My question comes from Introduction of Memory Devices topic in division Memory Devices of Digital Circuits

Answer»

The correct choice is (b) The surface of a rotating MAGNETIC drum

Explanation: Magnetic drum is a STORAGE MEDIUM USING the surface of a rotating magnetic drum which have tendency to hold the data.

213.

Magnetic recording is the process of __________(a) Storing data symmetrically(b) Storing data sequentially(c) Storing data magnetically(d) Both storing data symmetrically andThis question was addressed to me in an internship interview.This interesting question is from Introduction of Memory Devices in section Memory Devices of Digital Circuits

Answer»

The correct choice is (c) Storing data MAGNETICALLY

Explanation: Based on material used for CONSTRUCTION, memory devices are classifieds into two CATEGORIES, viz., MAGNETIC and Semiconductor memory. Magnetic recording is the process of storing data magnetically. Hard DISK, floppy disk, magnetic tape are examples of the magnetic recording process.

214.

Based on material used for construction, memory devices are classifieds into ________ categories.(a) 2(b) 3(c) 4(d) 5I had been asked this question in an interview.The above asked question is from Introduction of Memory Devices topic in chapter Memory Devices of Digital Circuits

Answer»

The correct answer is (a) 2

Easy EXPLANATION: Based on material used for construction, MEMORY devices are classifieds into two categories, viz., MAGNETIC and Semiconductor memory. Magnetic RECORDING is the process of storing data magnetically. Hard disk, FLOPPY disk, magnetic tape are examples of magnetic recording process.

215.

The example of non-volatile memory device is __________(a) Magnetic Core Memory(b) Read Only Memory(c) Random Access Memory(d) Both Magnetic Core Memory and Read Only MemoryI have been asked this question in an online interview.Enquiry is from Introduction of Memory Devices topic in chapter Memory Devices of Digital Circuits

Answer»

Right option is (d) Both Magnetic Core Memory and Read Only Memory

Easy explanation: Non-volatile means ‘not volatile’ and non-volatile memory REFERS to the memory which retains the DATA even if there is a BREAK in the POWER supply. The examples of non-volatile memory devices are Magnetic Core Memory & ROM because both have capability to retain the data.

216.

Non-volatile memory refers to __________(a) The memory whose loosed data is retained again when power to the memory circuit is removed/applied(b) The memory which looses data when power to the memory circuit is removed(c) The memory which looses data when power to the memory circuit is applied(d) The memory whose loosed data is achieved again when power to the memory circuit is appliedI got this question during an internship interview.I'd like to ask this question from Introduction of Memory Devices topic in chapter Memory Devices of Digital Circuits

Answer»

Right OPTION is (a) The MEMORY whose LOOSED data is retained again when power to the memory circuit is removed/applied

For explanation I would say: VOLATILE means ‘liable to change rapidly’ and volatile memory refers to the memory which looses data rapidly when power to the memory circuit is removed. Thus, it looks after it’s data as long as it is powered. Non-volatile means ‘not volatile’ and non-volatile memory refers to the memory which retains the data even if there is a break in the power supply.

217.

Volatile memory refers to __________(a) The memory whose loosed data is achieved again when power to the memory circuit is removed(b) The memory which looses data when power to the memory circuit is removed(c) The memory which looses data when power to the memory circuit is applied(d) The memory whose loosed data is achieved again when power to the memory circuit is appliedI had been asked this question during an online exam.My question comes from Introduction of Memory Devices topic in portion Memory Devices of Digital Circuits

Answer» RIGHT answer is (b) The memory which looses DATA when power to the memory circuit is removed

To EXPLAIN I would say: Volatile means ‘liable to change rapidly’ and volatile memory refers to the memory which looses data rapidly when power to the memory circuit is removed. THUS, it looks after it’s data as long as it is POWERED. Non-volatile means ‘not volatile’ and non-volatile memory refers to the memory which retains the data even if there is a break in the power supply.
218.

Static memory holds data as long as __________(a) AC power is applied(b) DC power is applied(c) Capacitor is fully charged(d) High ConductivityI have been asked this question during an online interview.The query is from Introduction of Memory Devices topic in section Memory Devices of Digital Circuits

Answer»

The correct answer is (b) DC power is applied

For EXPLANATION: In any semiconductor EQUIPMENT, AC power can’t be supplied directly. So, static MEMORY holds the data as long as DC power is applied.

219.

To store 1-bit of information, how many transistor is/are used ____________(a) 1(b) 2(c) 3(d) 4This question was addressed to me during an online exam.The origin of the question is Introduction of Memory Devices topic in division Memory Devices of Digital Circuits

Answer»

Correct CHOICE is (a) 1

For explanation: Only one BIT TRANSISTOR is needed to store 1-bit of information.

220.

A dynamic memory is one in which __________(a) Content changes with time(b) Content doesn’t changes with time(c) Memory is static always(d) Memory is dynamic alwaysThis question was addressed to me in exam.My question is based upon Introduction of Memory Devices topic in portion Memory Devices of Digital Circuits

Answer» RIGHT OPTION is (d) Memory is DYNAMIC always

Explanation: A static memory is ONE in which content doesn’t change with time (i.e. stable). Dynamic memory is one in which content changes with time (i.e. unstable).
221.

Dynamic memory cells use _______________ as the storage device.(a) The reactance of a transistor(b) The impedance of a transistor(c) The capacitance of a transistor(d) The inductance of a transistorI have been asked this question in an interview for job.This intriguing question originated from Introduction of Memory Devices in chapter Memory Devices of Digital Circuits

Answer»

Correct answer is (C) The capacitance of a transistor

To EXPLAIN: Capacitance of a transistor prevents from LOSS of information in a dynamic memory cell.

222.

A static memory is one in which __________(a) Content changes with time(b) Content doesn’t changes with time(c) Memory is static always(d) Memory is dynamic alwaysThe question was posed to me by my college director while I was bunking the class.This intriguing question originated from Introduction of Memory Devices topic in section Memory Devices of Digital Circuits

Answer»

The CORRECT answer is (d) MEMORY is DYNAMIC always

To elaborate: A static memory is one in which content doesn’t changes with TIME (i.e. stable). Dynamic memory is one in which content changes with time (i.e. unstable).

223.

A Random Access Memory is one in which __________(a) Any location can be accessed sequentially(b) Any location can be accessed randomly(c) Any location can be accessed serially(d) Any location can be accessed parallelyI have been asked this question at a job interview.Origin of the question is Introduction of Memory Devices topic in section Memory Devices of Digital Circuits

Answer» CORRECT option is (B) Any location can be accessed randomly

Best EXPLANATION: A RANDOM Access Memory is ONE in which any location can be accessed randomly.
224.

An example of RAM is __________(a) Floppy disk(b) Hard disk(c) Magnetic tape memory(d) Semiconductor RAMThe question was asked during an online exam.I need to ask this question from Introduction of Memory Devices in section Memory Devices of Digital Circuits

Answer»

Correct OPTION is (d) Semiconductor RAM

Explanation: A Random Access Memory is one in which any LOCATION can be ACCESSED randomly. A semiconductor RAM is too much fast and can OCCUPY any SPACE in the memory location.

225.

A sequential access memory is one in which __________(a) A particular memory location is accessed rapidly(b) A particular memory location is accessed sequentially(c) A particular memory location is accessed serially(d) A particular memory location is accessed parallelyThis question was posed to me in homework.Origin of the question is Introduction of Memory Devices in chapter Memory Devices of Digital Circuits

Answer»

Right choice is (b) A particular memory LOCATION is accessed sequentially

The EXPLANATION: A sequential access memory is ONE in which A particular memory location is accessed sequentially (i.e. the ith memory location is accessed only after sequencing through previous (i-1) memory locations).

226.

An example of sequential access memory is __________(a) Floppy disk(b) Hard disk(c) Magnetic tape memory(d) RAMThis question was posed to me in my homework.I need to ask this question from Introduction of Memory Devices in portion Memory Devices of Digital Circuits

Answer» RIGHT choice is (C) MAGNETIC tape memory

The best explanation: A sequential access memory is one in which a particular memory location is accessed sequentially. In magnetic tape memory, DATA is accessed sequentially.
227.

Based on method of access, memory devices are classified into ____________ categories.(a) 2(b) 3(c) 4(d) 5The question was posed to me in an international level competition.I would like to ask this question from Introduction of Memory Devices topic in division Memory Devices of Digital Circuits

Answer»

Right option is (a) 2

Explanation: BASED on the method of access, memory devices are classified into two categories and these are SEQUENTIAL access memory and RAM. A sequential access memory is one in which a PARTICULAR memory location is accessed SEQUENTIALLY.

228.

Which memories are if magnetic memory type?(a) Main Memory(b) Secondary Memory(c) Static Memory(d) Volatile MemoryThe question was posed to me during an online exam.This interesting question is from Introduction of Memory Devices in portion Memory Devices of Digital Circuits

Answer» RIGHT answer is (b) Secondary Memory

The BEST I can EXPLAIN: USUALLY, secondary memories are of magnetic memory type that are USED to store large type quantities of data. In secondary memory, data is usually stored for a long-term.
229.

Which of the following comes under secondary memory/ies?(a) Floppy disk(b) Magnetic drum(c) Hard disk(d) All of the MentionedI got this question in homework.Query is from Introduction of Memory Devices topic in portion Memory Devices of Digital Circuits

Answer»

The CORRECT answer is (d) All of the Mentioned

For explanation: All of the mentioned EQUIPMENTS are of external STORAGE which is known as secondary MEMORIES. In secondary memory, data is usually stored for a long-term.

230.

As the storage capacity of the main memory is inadequate, which memory is used to enhance it?(a) Secondary Memory(b) Auxiliary Memory(c) Static Memory(d) Both Secondary Memory and Auxiliary MemoryThis question was addressed to me in an interview for internship.This intriguing question comes from Introduction of Memory Devices in chapter Memory Devices of Digital Circuits

Answer»

Right option is (d) Both SECONDARY MEMORY and Auxiliary Memory

To EXPLAIN I would say: As the storage capacity of the main memory is inadequate, Secondary memory is used to enhance it and it is also KNOWN as auxiliary memory. Secondary memory is also known as Registers/Main Memory. In secondary memory, data is usually STORED for a long-term.

231.

Main memories of a computer, usually made up of __________(a) Registers(b) Semiconductors(c) Counters(d) PLDsThe question was asked during an online interview.Question is from Introduction of Memory Devices topic in portion Memory Devices of Digital Circuits

Answer»

The correct choice is (B) Semiconductors

To explain: MAIN memories of a computer, usually MADE up of semiconductors which are available external to the CPU to store program and data during EXECUTION of a program. Registers are present within the CPU to store data temporarily during arithmetic and logical OPERATIONS and during the functioning of the ALU.

232.

Which of the following has the lowest access time?(a) RAM(b) ROM(c) Registers(d) FlagI got this question in unit test.My doubt stems from Introduction of Memory Devices topic in division Memory Devices of Digital Circuits

Answer»

Correct answer is (c) REGISTERS

To explain I WOULD say: Registers has the lowest access time, as they are available inside the CPU. Registers are present within the CPU to store data temporarily during ARITHMETIC and logical operations and during the functioning of the ALU.

233.

In a computer, registers are present __________(a) Within control unit(b) Within RAM(c) Within ROM(d) Within CPUThis question was addressed to me by my college professor while I was bunking the class.My question comes from Introduction of Memory Devices topic in section Memory Devices of Digital Circuits

Answer»

Correct answer is (d) Within CPU

For explanation: In a COMPUTER, registers are present within the CPU to STORE data TEMPORARILY during arithmetic and LOGICAL operations and during the FUNCTIONING of the ALU.

234.

Secondary memory is also known as ___________(a) Registers(b) Main Memory(c) RAM(d) Both registers and main memoryI have been asked this question at a job interview.My enquiry is from Introduction of Memory Devices in chapter Memory Devices of Digital Circuits

Answer» CORRECT OPTION is (d) Both registers and main memory

Best explanation: Secondary memory is also KNOWN as Registers/Main Memory. In secondary memory, data is usually STORED for a long-term.
235.

The difference between FPGA and PLD is that __________(a) FPGA is slower than PLD(b) FPGA has high power dissipation(c) FPGA incorporates logic blocks(d) All of the MentionedI have been asked this question by my college professor while I was bunking the class.I want to ask this question from Introduction of Memory Devices topic in division Memory Devices of Digital Circuits

Answer»

Right ANSWER is (c) FPGA incorporates logic blocks

The explanation is: The DIFFERENCE between FPGA and PLD is that FPGA incorporates logic blocks instead of fixed AND-OR GATES and is faster with low power dissipation. FPGAs are designed for having higher gate COUNT whereas, PLDs are used for lesser gate counts.

236.

Memories are classified into _____ categories.(a) 3(b) 4(c) 5(d) 6This question was posed to me in an interview for job.Question is taken from Introduction of Memory Devices topic in section Memory Devices of Digital Circuits

Answer» RIGHT ANSWER is (c) 5

Easiest explanation: Memory is typically CLASSIFIED of 2 TYPES: Primary and Secondary. These are further classified into 5 types of memories and these are Secondary, RAM, Dynamic/Static, Volatile/Non-volatile, Magnetic/Semiconductor Memory.
237.

Which of the following is a reprogrammable gate array?(a) EPROM(b) FPGA(c) Both EPROM and FPGA(d) ROMThis question was posed to me in my homework.My enquiry is from Introduction of Memory Devices in portion Memory Devices of Digital Circuits

Answer»

Right OPTION is (c) Both EPROM and FPGA

The BEST I can EXPLAIN: Both FPGA and EPROM are reprogrammable gate ARRAY.

238.

FPGA stands for __________(a) Full Programmable Gate Array(b) Full Programmable Genuine Array(c) First Programmable Gate Array(d) Field Programmable Gate ArrayI have been asked this question in an interview for internship.The question is from Introduction of Memory Devices in portion Memory Devices of Digital Circuits

Answer»

The correct CHOICE is (d) Field Programmable Gate ARRAY

The explanation: In digital electronics, FPGA stands for Field Programmable Gate Array. This type of integrated circuit is for general-purpose which is configured by the USER as PER their requirement.

239.

The programmability and high density of PLDs make them useful in the design of __________(a) ISAC(b) ASIC(c) SACC(d) CISFThe question was asked in unit test.I need to ask this question from Introduction of Memory Devices in division Memory Devices of Digital Circuits

Answer»

Correct ANSWER is (B) ASIC

The best EXPLANATION: The programmability and HIGH density of PLDs make them USEFUL in the design of ASIC (i.e. Application Specific Integrated Circuits) where design changes can be more rapidly and inexpensively.

240.

ASIC stands for __________(a) Application Special Integrated Circuits(b) Applied Special Integrated Circuits(c) Application Specific Integrated Circuits(d) Applied Specific Integrated CircuitsThe question was asked during an online interview.Question is from Introduction of Memory Devices topic in chapter Memory Devices of Digital Circuits

Answer»

The correct CHOICE is (c) APPLICATION Specific Integrated CIRCUITS

The best explanation: In digital electronics, ASIC stands for Application Specific Integrated Circuits. It is a customized integrated CIRCUIT which is produced for a specific use and not for a common-purpose.

241.

When both the AND and OR are programmable, such PLDs are known as __________(a) PAL(b) PPL(c) PLA(d) APLThis question was posed to me during an online interview.This interesting question is from Introduction of Memory Devices in section Memory Devices of Digital Circuits

Answer»

Correct answer is (c) PLA

Explanation: When both the AND and OR are programmable, such PLDs are known as PLA (i.e. Programmable LOGIC Array). HOWEVER, PLA is more flexible but has LESS SPEED.

242.

PLDs with programmable AND and fixed OR arrays are called __________(a) PAL(b) PLA(c) APL(d) PPLThis question was posed to me at a job interview.The query is from Introduction of Memory Devices in portion Memory Devices of Digital Circuits

Answer»

Right choice is (a) PAL

For EXPLANATION: PLDs with programmable AND and fixed OR arrays are called PAL (i.e. Programmable Array LOGIC). HOWEVER, PAL is less FLEXIBLE but has higher speed.

243.

The full form of EPROM is __________(a) Easy Programmable Read Only Memory(b) Erasable Programmable Read Only Memory(c) Eradicate Programmable Read Only Memory(d) Easy Programmable Read Out MemoryI had been asked this question in an internship interview.I'm obligated to ask this question of Introduction of Memory Devices in section Memory Devices of Digital Circuits

Answer»

Correct option is (B) ERASABLE Programmable Read Only Memory

Explanation: The FULL form of EPROM is Erasable Programmable Read Only Memory, where the ROM can be erased and re-used by the user.

244.

The full form of PROM is __________(a) Previous Read Only Memory(b) Programmable Read Out Memory(c) Programmable Read Only Memory(d) Previous Read Out MemoryThis question was addressed to me during an online exam.This intriguing question comes from Introduction of Memory Devices topic in chapter Memory Devices of Digital Circuits

Answer»

Correct option is (c) PROGRAMMABLE Read Only MEMORY

The explanation: The full FORM of PROM is Programmable Read Only Memory, where the ROM can be programmed by the user.

245.

For reprogrammability, PLDs use __________(a) PROM(b) EPROM(c) CDROM(d) PLAThe question was posed to me during an interview.This interesting question is from Introduction of Memory Devices in section Memory Devices of Digital Circuits

Answer»

The correct answer is (b) EPROM

The explanation: For reprogrammability, PLDs use EPROM (i.e. Erasable PROM). It erases the previous program and starts uploading a new ONE. However, DATA is erased by EXPOSING it to UV-light, which is a TEDIOUS and time-consuming process.

246.

ROM consist of __________(a) NOR and OR arrays(b) NAND and NOR arrays(c) NAND and OR arrays(d) NOR and AND arraysI got this question in semester exam.The question is from Introduction of Memory Devices topic in portion Memory Devices of Digital Circuits

Answer»

Right option is (c) NAND and OR arrays

Explanation: ROM CONSISTS of NAND and OR arrays which can be PROGRAMMED by the user to IMPLEMENT combinational & SEQUENTIAL functions. Combinational OPERATIONS like that of adders and subtractors and Sequential Functions like that of storing in the memory.

247.

The full form of ROM is __________(a) Read Outside Memory(b) Read Out Memory(c) Read Only Memory(d) Read One MemoryThe question was asked by my college professor while I was bunking the class.This key question is from Introduction of Memory Devices in division Memory Devices of Digital Circuits

Answer»

The correct choice is (C) Read Only Memory

For explanation I would say: The FULL FORM of ROM is Read Only Memory.

248.

A ROM is defined as __________(a) Read Out Memory(b) Read Once Memory(c) Read Only Memory(d) Read One MemoryThis question was addressed to me by my school principal while I was bunking the class.I would like to ask this question from Introduction of Memory Devices in chapter Memory Devices of Digital Circuits

Answer»

The correct answer is (c) READ Only Memory

The EXPLANATION: A ROM is DEFINED as Read Only Memory which can read the instruction STORED in a computer.

249.

The evolution of PLD began with __________(a) EROM(b) RAM(c) PROM(d) EEPROMThis question was posed to me in an interview for job.My doubt stems from Introduction of Memory Devices in chapter Memory Devices of Digital Circuits

Answer»

The CORRECT answer is (a) EROM

For explanation I WOULD say: The evolution of PLD (Programmable Logic Device) began with Programmable READ Only MEMORY (i.e. PROM). Here, the ROM can be externally PROGRAMMED as per the user.

250.

The full form of PLD is __________(a) Programmable Large Device(b) Programmable Long Device(c) Programmable Logic Device(d) Programmable Lengthy DeviceThis question was addressed to me during an internship interview.My doubt is from Introduction of Memory Devices topic in portion Memory Devices of Digital Circuits

Answer»

The correct OPTION is (C) Programmable Logic DEVICE

To explain I WOULD say: The full form of PLD is Programmable Logic Device.