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This section includes InterviewSolutions, each offering curated multiple-choice questions to sharpen your knowledge and support exam preparation. Choose a topic below to get started.

151.

Which of the following can easily convert to a non-volatile memory?(a) SRAM(b) DRAM(c) DDR SRAM(d) Asynchronous DRAMThis question was addressed to me in final exam.I would like to ask this question from SRAM in portion Memory Systems of Embedded Systems

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Correct choice is (a) SRAM

To explain I would say: The low POWER consumption makes SRAM easily CONVERTIBLE to non-volatile memory, by ADDING a small battery it can retain its data even when the MAIN power is lost.

152.

Which of the following is the main factor which determines the memory capacity?(a) number of transistors(b) number of capacitors(c) size of the transistor(d) size of the capacitorThe question was asked in an online quiz.I would like to ask this question from DRAM in section Memory Systems of Embedded Systems

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Correct CHOICE is (a) number of transistors

For explanation I would SAY: The CHIP capacity is DEPENDENT on the number of transistors which can be fabricated on the SILICON, and DRAM offers more storage capacity than SRAM.

153.

Which of the following memory technology is highly denser?(a) DRAM(b) SRAM(c) EPROM(d) Flash memoryThe question was asked during an interview for a job.This interesting question is from DRAM in portion Memory Systems of Embedded Systems

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Correct choice is (a) DRAM

The explanation is: DRAM is highly denser and cheaper because it only uses a single capacitor for STORING ONE BIT.

154.

In which of the memories, does the data disappear?(a) SRAM(b) DRAM(c) Flash memory(d) EPROMThe question was posed to me in final exam.I would like to ask this question from DRAM topic in section Memory Systems of Embedded Systems

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Correct OPTION is (b) DRAM

The explanation is: Both SRAM and DRAM are volatile memories and flash MEMORY and EPROM are non-volatile memories. DRAM has a storage element as a CAPACITOR whose CHARGE loses gradually thereby losing data.

155.

How many main signals are used with memory chips?(a) 2(b) 4(c) 6(d) 8I got this question in final exam.Asked question is from Memory Technology of Embedded Systems topic in portion Memory Systems of Embedded Systems

Answer» RIGHT answer is (b) 4

Best explanation: The main signals associated with memory chips are FOUR. These are the signals associated with address bus, DATA bus, chip select signals, and control signals for read and write OPERATIONS.
156.

Which is the most basic non-volatile memory?(a) Flash memory(b) PROM(c) EPROM(d) ROMThe question was asked in an internship interview.My query is from Memory Technology of Embedded Systems topic in division Memory Systems of Embedded Systems

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Right option is (d) ROM

For EXPLANATION I would say: The BASIC non-volatile memory is ROM or mask ROM, and the CONTENT of ROM is fixed in the chip which is useful in FIRMWARE programs for booting up the SYSTEM.

157.

Which refresh techniques depends on the size of time critical code for calculating the refresh cycle?(a) burst refresh(b) distributed refresh(c) refresh cycle(d) software refreshThis question was posed to me during an interview for a job.This interesting question is from DRAM Refreshing Techniques in section Memory Systems of Embedded Systems

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Right answer is (b) distributed refresh

To explain I WOULD say: Most of the system uses the distributed method and depending on the SIZE of the time critical code, the NUMBER of refresh cycles can be CALCULATED.

158.

Which of the following uses a timer for refresh technique?(a) RAS(b) CBR(c) software refresh(d) CASThe question was asked in an online interview.Question is taken from DRAM Refreshing Techniques in section Memory Systems of Embedded Systems

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The correct choice is (c) software refresh

The explanation is: The software refresh performs the action by using a ROUTINE to PERIODICALLY cycle through the memory and REFRESHES. It USES a timer in the program generating an interrupt. This interrupt performs the REFRESHING part in the DRAM.

159.

What is the worst case delay of the burst refresh in 4M by 1 DRAM?(a) 0.4ms(b) 0.2ms(c) 170ns(d) 180nsI got this question during an interview.I need to ask this question from DRAM Refreshing Techniques in chapter Memory Systems of Embedded Systems

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Correct choice is (b) 0.2ms

For explanation I would say: A 4M by 1 DRAM have 1024 REFRESH cycles. Bursting delay will be 0.2ms that are, the worst case delay is 1024 times larger than that of the SINGLE refresh cycle. The distributed delay is about 170ns.

160.

Which of the following consist two lines of legs on both sides of a plastic or ceramic body?(a) SIMM(b) DIMM(c) Zig-zag(d) Dual in-lineI have been asked this question in a job interview.This interesting question is from Memory Management in chapter Memory Systems of Embedded Systems

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Correct answer is (d) Dual in-line

To EXPLAIN: The dual-in-line package CONSISTS of two lines of legs on both sides of the plastic or ceramic. Most commonly used are BIOS EPROMs, DRAM and SRAM.

161.

Which statement is true for a cache memory?(a) memory unit which communicates directly with the CPU(b) provides backup storage(c) a very high-speed memory to increase the speed of the processor(d) secondary storageThis question was addressed to me during a job interview.The question is from Memory Organisation of Embedded Systems in division Memory Systems of Embedded Systems

Answer» CORRECT answer is (c) a very high-SPEED MEMORY to increase the speed of the processor

The best EXPLANATION: The RAM is the primary storage which directly communicates with the CPU. ROM is the secondary storage. Disk drives are capable of providing backup storage and the cache memory is a small high-speed memory which increases the speed of the processor.
162.

In which memory, the signals are multiplexed?(a) DRAM(b) SRAM(c) EPROM(d) EEPROMThe question was posed to me at a job interview.This is a very interesting question from Memory Technology of Embedded Systems in section Memory Systems of Embedded Systems

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Right choice is (a) DRAM

For EXPLANATION I WOULD say: The signals in address bus are MULTIPLEXED with DRAM non-multiplexed with SRAM.

163.

Which memory package has a single row of pins?(a) SIMM(b) DIP(c) SIP(d) zig-zagThis question was posed to me during an interview for a job.Question is taken from Memory Management in section Memory Systems of Embedded Systems

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The correct choice is (c) SIP

To elaborate: The SINGLE-in-line package is the same as that of SIMM, in which the finger connections are REPLACED by a single ROW of pins. SIP took the popularity of SIMM but nowadays it is rarely seen.

164.

Which of the following can access data even when the power supply is lost?(a) Non-volatile SRAM(b) DRAM(c) SRAM(d) RAMThe question was asked in examination.The query is from SRAM topic in chapter Memory Systems of Embedded Systems

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Right choice is (a) Non-volatile SRAM

To explain I would say: Random ACCESS Memory is the PRIMARY storage which can access data only when it is powered up. But non-volatile SRAM can access data even when the power supply is lost. It is used in many APPLICATIONS like networking, aerospace ETC.

165.

Which of the following is more quickly accessed?(a) RAM(b) Cache memory(c) DRAM(d) SRAMI got this question in final exam.I'd like to ask this question from Cache Memory in division Memory Systems of Embedded Systems

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Right answer is (b) Cache memory

To explain: The cache memory is a small random access memory which is FASTER than a normal RAM. It has a direct connection with the CPU OTHERWISE, there will be a separate bus for ACCESSING data. The processor will check whether the COPY of the required data is present in the cache memory if so it will access the data from the cache memory.

166.

Which of the following is also known as hyper page mode enabled DRAM?(a) page mode(b) EDO DRAM(c) burst EDO DRAM(d) page interleavingThe question was asked by my school principal while I was bunking the class.This interesting question is from DRAM Interfaces in section Memory Systems of Embedded Systems

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Correct choice is (b) EDO DRAM

For explanation I would say: The EDODRAM is ALSO KNOWN as HYPER page mode enable DRAM because of the faster page mode operation ALONG with some additional FEATURES.

167.

Which mode offers the banking of memory in the DRAM interfacing technique?(a) page mode(b) basic DRAM interfacing(c) page interleaving(d) burst modeThe question was asked during an internship interview.Question is taken from DRAM Interfaces in chapter Memory Systems of Embedded Systems

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Correct option is (C) PAGE interleaving

Easy EXPLANATION: The accessing of data outside the page boundary can cause missing of PAGES in the page mode OPERATION. So a program has to operate for frequently accessing data thereby, increasing the efficiency in the page selection. One such mode is the page interleaving mode in which the memory is divided into different banks, depending on the number of memories installed.

168.

Which of the following have a 16 Mbytes addressed range?(a) PowerPC(b) M68000(c) DSP56000(d) TMS 320The question was posed to me during an interview.I'm obligated to ask this question of Memory Management topic in chapter Memory Systems of Embedded Systems

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Correct option is (b) M68000

The best explanation: The M68000 family has a 16 Mbyte ADDRESSING range. The POWERPC family has a LARGER 4 Gbyte range and the DSP56000 has a 128-kilo word ADDRESS space.

169.

How is the refresh rate calculated?(a) by refresh time(b) by the refresh cycle(c) by refresh cycle and refresh time(d) refresh frequency and refresh cycleI had been asked this question by my college director while I was bunking the class.My doubt stems from DRAM Refreshing Techniques in chapter Memory Systems of Embedded Systems

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Correct option is (C) by refresh cycle and refresh time

The EXPLANATION is: The time required for refreshing the whole chip is known as refresh time. The number of access NEEDED to complete refresh is CALLED as the number of cycles. The number of cycles divided by the refresh time GIVES the refresh rate.

170.

Who invented TriMedia processor?(a) Intel(b) IBM(c) Apple(d) NXP SemiconductorThe question was posed to me by my school teacher while I was bunking the class.Query is from Memory Technology of Embedded Systems in chapter Memory Systems of Embedded Systems

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The correct CHOICE is (d) NXP Semiconductor

To elaborate: TriMedia is a VLIW PROCESSOR from NXP Semiconductor in the Netherlands. It possesses a HARVARD architecture CPU for video and audio APPLICATIONS.

171.

What is the purpose of the address bus?(a) to provide data to and from the chip(b) to select a specified chip(c) to select a location within the memory chip(d) to select a read/write cycleThe question was posed to me in final exam.This interesting question is from Memory Technology of Embedded Systems in section Memory Systems of Embedded Systems

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Right choice is (c) to select a location within the MEMORY chip

For explanation I would say: ADDRESS bus is used to choose a particular location in the memory chip. DATA bus is used to provide data to and from the chip. Chip select SIGNALS are used to select a particular chip within the memory.