A technique used to reduce the magnitude of threshold voltage of MOSFET is the ___________(a) Use of complementary MOSFET(b) Use of Silicon nitride(c) Using thin film technology(d) Increasing potential of the channelThe question was posed to me by my college professor while I was bunking the class.My question is from MOS Digital Integrated Circuits in division Logic Families of Digital Circuits

A technique used to reduce the magnitude of threshold voltage of MOSFE

1.	A technique used to reduce the magnitude of threshold voltage of MOSFET is the ___________(a) Use of complementary MOSFET(b) Use of Silicon nitride(c) Using thin film technology(d) Increasing potential of the channelThe question was posed to me by my college professor while I was bunking the class.My question is from MOS Digital Integrated Circuits in division Logic Families of Digital Circuits
Answer» The correct answer is (b) Use of SILICON NITRIDE The best I can explain: Silicon nitride is sandwiched between two SiO2 layer and provide NECESSARY barrier. The dielectric constant of Si3N4 is 7.5, whereas that of SiO2 is 4. This increase in overall dielectric constant reduces threshold voltage.

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