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The flip-flop in static memory cell can be constructed using ____________(a) Capacitor or MOSFET(b) FET or JFET(c) Capacitor or BJT(d) BJT or MOSFETI have been asked this question in semester exam.The origin of the question is Random Access Memory in portion Memory Devices of Digital Circuits |
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Answer» Correct OPTION is (d) BJT or MOSFET |
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