The full form of FAMOS is _____________(a) Floating Gate Avalanche Injection MOS(b) Float Gate Avalanche Injection MOS(c) Floating Gate Avalanche Induction MOS(d) Float Gate Avalanche Induction MOSI had been asked this question in examination.My doubt is from Programmable Read Only Memory in section Memory Devices of Digital Circuits

The full form of FAMOS is _____________(a) Floating Gate Avalanche Inj

1.	The full form of FAMOS is _____________(a) Floating Gate Avalanche Injection MOS(b) Float Gate Avalanche Injection MOS(c) Floating Gate Avalanche Induction MOS(d) Float Gate Avalanche Induction MOSI had been asked this question in examination.My doubt is from Programmable Read Only Memory in section Memory Devices of Digital Circuits
Answer» RIGHT OPTION is (a) Floating Gate Avalanche Injection MOS To explain I would say: The full form of FAMOS is Floating Gate Avalanche Injection MOS. It is a floating gate transistor in which the trapped ELECTRONS is responsible for the DROPPING of the VOLTAGE.

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