InterviewSolution
This section includes InterviewSolutions, each offering curated multiple-choice questions to sharpen your knowledge and support exam preparation. Choose a topic below to get started.
| 51. |
PLD contains a large number of _________(a) Flip-flops(b) Gates(c) Registers(d) All of the MentionedThe question was posed to me in an interview for internship.The above asked question is from Programmable Logic Array in chapter Memory Devices of Digital Circuits |
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Answer» Right OPTION is (d) All of the Mentioned |
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| 52. |
The full form of PLD is _________(a) Programmable Load Devices(b) Programmable Logic Data(c) Programmable Logic Devices(d) Programmable Loaded DevicesThis question was addressed to me by my school teacher while I was bunking the class.Query is from Programmable Logic Array in section Memory Devices of Digital Circuits |
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Answer» CORRECT choice is (c) Programmable Logic Devices Easiest EXPLANATION: The full form of PLD is Programmable Logic Devices. It is a collection of GATES, flip-flops and registers on a SINGLE chip. |
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| 53. |
How many 16K * 4 RAMs are required to achieve a memory with a capacity of 64K and a word length of 8 bits?(a) 2(b) 4(c) 6(d) 8This question was addressed to me in my homework.This question is from Programmable Logic Array in chapter Memory Devices of Digital Circuits |
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Answer» The correct answer is (d) 8 |
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| 54. |
How many 1024 * 1 RAM chips are required to construct a 1024 * 8 memory system?(a) 4(b) 6(c) 8(d) 12I have been asked this question in a job interview.Enquiry is from Programmable Logic Array in division Memory Devices of Digital Circuits |
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Answer» The correct OPTION is (c) 8 |
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| 55. |
To construct 16K * 4-bit memory, how many 4116 ICs are required?(a) 1(b) 2(c) 3(d) 4I got this question in my homework.I would like to ask this question from Programmable Logic Array in chapter Memory Devices of Digital Circuits |
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Answer» Right option is (d) 4 |
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| 56. |
How memory expansion is done?(a) By increasing the supply voltage of the Memory ICs(b) By decreasing the supply voltage of the Memory ICs(c) By connecting Memory ICs together(d) By separating Memory ICsThe question was asked in class test.The query is from Programmable Logic Array topic in portion Memory Devices of Digital Circuits |
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Answer» RIGHT choice is (C) By connecting Memory ICS TOGETHER Easiest explanation: Memory ICs can be connected together to expand the number of memory words or the number of bits PER word. |
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| 57. |
IC 4116 is organised as _________(a) 512 * 4(b) 16 * 1(c) 32 * 4(d) 64 * 2I had been asked this question in examination.My question is from Programmable Logic Array topic in division Memory Devices of Digital Circuits |
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Answer» The correct answer is (C) 32 * 4 |
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| 58. |
How many address bits are required to select memory location in the Memory decoder?(a) 4 KB(b) 8 KB(c) 12 KB(d) 16 KBThis question was posed to me during an online interview.My question is taken from Programmable Logic Array in division Memory Devices of Digital Circuits |
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Answer» Correct OPTION is (c) 12 KB |
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| 59. |
The first step in the design of memory decoder is __________(a) Selection of a EPROM(b) Selection of a RAM(c) Address assignment(d) Data insertionI have been asked this question in exam.My doubt is from Programmable Logic Array in division Memory Devices of Digital Circuits |
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Answer» The CORRECT choice is (c) Address assignment |
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| 60. |
What is memory decoding?(a) The process of Memory IC used in a digital system is overloaded with data(b) The process of Memory IC used in a digital system is selected for the range of address assigned(c) The process of Memory IC used in a digital system is selected for the range of data assigned(d) The process of Memory IC used in a digital system is overloaded with data allocated in memory cellI had been asked this question in class test.I'm obligated to ask this question of Programmable Logic Array in division Memory Devices of Digital Circuits |
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Answer» Right option is (b) The process of Memory IC used in a digital system is SELECTED for the RANGE of address assigned |
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| 61. |
Which of the following is not a primary storage device?(a) Optical disk(b) Magnetic tape(c) Magnetic disk(d) RAMI have been asked this question during an online interview.The question is from Random Access Memory topic in division Memory Devices of Digital Circuits |
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Answer» RIGHT CHOICE is (d) RAM Explanation: RAM (i.e. Random Access Memory) is not a PRIMARY STORAGE device. |
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| 62. |
A place which is used as storage location in a computer __________(a) A bit(b) A record(c) An address(d) A byteThe question was posed to me during an interview.I'd like to ask this question from Random Access Memory in chapter Memory Devices of Digital Circuits |
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Answer» The correct choice is (C) An address |
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| 63. |
CD-ROM is a __________(a) Memory register(b) Magnetic memory(c) Semiconductor memory(d) Non-volatile memoryThe question was posed to me during an interview.Query is from Random Access Memory in chapter Memory Devices of Digital Circuits |
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Answer» Right answer is (d) Non-volatile MEMORY |
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| 64. |
The memory which is used for storing programs and data currently being processed by the CPU is called __________(a) PROM(b) Main Memory(c) Non-volatile memory(d) Mass memoryI have been asked this question in quiz.My doubt is from Random Access Memory in chapter Memory Devices of Digital Circuits |
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Answer» RIGHT choice is (a) PROM Explanation: PROM has the capability to store the data DUE to the presence of MOSFET which is processed by the CPU. It is one-time programmable by the user. |
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| 65. |
Which one is self-compatible?(a) ROM(b) RAM(c) EROM(d) PROMI have been asked this question in an online interview.This intriguing question comes from Random Access Memory topic in portion Memory Devices of Digital Circuits |
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Answer» The correct choice is (b) RAM |
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| 66. |
Which one is more economical?(a) ROM(b) RAM(c) EROM(d) PROMI have been asked this question during a job interview.I want to ask this question from Random Access Memory topic in section Memory Devices of Digital Circuits |
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Answer» The correct ANSWER is (B) RAM |
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| 67. |
RAMs are utilized in the computer as __________(a) Scratch-pad(b) Buffer(c) Main memory(d) All of the MentionedThe question was posed to me in an interview for internship.Query is from Random Access Memory topic in chapter Memory Devices of Digital Circuits |
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Answer» CORRECT answer is (d) All of the Mentioned For explanation: RAMs are UTILIZED in the computer as a scratch-pad, buffer and main memories. These are the APPLICATIONS of RAMs. Mostly, these RAMs are DRAMs as they provide HIGH speed. |
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| 68. |
The advantages of RAMs are __________(a) Non destructive read out(b) Fast operating speed(c) Low power dissipation(d) All of the MentionedI have been asked this question during an internship interview.My question is based upon Random Access Memory topic in section Memory Devices of Digital Circuits |
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Answer» Correct OPTION is (d) All of the Mentioned |
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| 69. |
When PSRAM is performing internal refresh __________(a) The read operation is performed(b) The write operation is performed(c) It can not be accessed for read or write(d) The voltage goes HIGHThis question was addressed to me in an international level competition.This intriguing question comes from Random Access Memory in division Memory Devices of Digital Circuits |
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Answer» The correct option is (C) It can not be accessed for read or write |
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| 70. |
Pseudo static RAM is a __________(a) Static RAM(b) Dynamic RAM(c) Cache(d) ROMThe question was asked by my college professor while I was bunking the class.Question is taken from Random Access Memory in chapter Memory Devices of Digital Circuits |
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Answer» The correct choice is (b) DYNAMIC RAM |
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| 71. |
How many supply voltage IC 4116 requires to operate the IC unit?(a) 3(b) 2(c) 1(d) 4This question was addressed to me during an online interview.The above asked question is from Random Access Memory in portion Memory Devices of Digital Circuits |
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Answer» The correct choice is (a) 3 |
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| 72. |
The full form of PSRAM is __________(a) Plugged Static RAM(b) Plugged Stored RAM(c) Pseudo Stored RAM(d) Pseudo Static RAMI got this question in exam.Question is from Random Access Memory topic in portion Memory Devices of Digital Circuits |
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Answer» The correct choice is (d) PSEUDO STATIC RAM |
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| 73. |
DRAM is fabricated by using IC __________(a) 2114(b) 7489(c) 4116(d) 2776The question was posed to me in an international level competition.This interesting question is from Random Access Memory in division Memory Devices of Digital Circuits |
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Answer» RIGHT option is (c) 4116 The explanation: DRAM is Dynamic RAM which TAKES more access time COMPARED to SRAM and is thus, slower in operation comparatively. ALTHOUGH, in general it offers high speed and is used in most computers nowadays. DRAM is fabricated by using IC 4116. |
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| 74. |
IC 4116 is of ______ storage memory.(a) 16 KB(b) 32 KB(c) 64 MB(d) 2 KBI had been asked this question in examination.The doubt is from Random Access Memory topic in section Memory Devices of Digital Circuits |
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Answer» The CORRECT answer is (a) 16 KB |
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| 75. |
What is a sense amplifier?(a) It is an amplifier which converts ac current into dc current(b) It is an amplifier which lowers the input voltage(c) It is an amplifier which increases the input voltage(d) It is an amplifier which converts the low voltage to a sufficient voltageThe question was posed to me in an interview for job.I need to ask this question from Random Access Memory in division Memory Devices of Digital Circuits |
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Answer» Right CHOICE is (d) It is an amplifier which converts the LOW voltage to a sufficient voltage |
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| 76. |
An address multiplexing in DRAM is of _____ bits.(a) 10240(b) 15289(c) 16384(d) 17654This question was posed to me in an online interview.This interesting question is from Random Access Memory topic in portion Memory Devices of Digital Circuits |
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Answer» Right option is (C) 16384 |
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| 77. |
Why do a DRAM employ the address multiplexing technique?(a) To reduce the number of memory locations(b) To increase the number of memory locations(c) To reduce the number of address lines(d) To increase the number of address linesThe question was asked during an online interview.The doubt is from Random Access Memory in section Memory Devices of Digital Circuits |
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Answer» Correct answer is (C) To REDUCE the number of address LINES |
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| 78. |
Which characteristic of RAM memory makes it not suitable for permanent storage?(a) Unreliable(b) Too slow(c) Too bulky(d) It is volatileThe question was asked in homework.My doubt stems from Random Access Memory in portion Memory Devices of Digital Circuits |
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Answer» The correct ANSWER is (d) It is volatile |
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| 79. |
Cache memory acts between __________(a) RAM and ROM(b) CPU and RAM(c) CPU and Hard Disk(d) CPU and ROMI had been asked this question in an online interview.Query is from Random Access Memory topic in section Memory Devices of Digital Circuits |
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Answer» Correct choice is (B) CPU and RAM |
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| 80. |
Dynamic RAM is used as main memory in a computer system as __________(a) It has a lower cell density(b) It needs refreshing circuitry(c) Consumes less power(d) Has higher speedI got this question at a job interview.I need to ask this question from Random Access Memory topic in division Memory Devices of Digital Circuits |
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Answer» The correct option is (d) Has higher speed |
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| 81. |
Virtual memory consists of __________(a) SRAM(b) DRAM(c) Magnetic memory(d) Main MemoryThis question was posed to me during a job interview.My question is based upon Random Access Memory topic in division Memory Devices of Digital Circuits |
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Answer» Right OPTION is (a) SRAM |
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| 82. |
The main memory of a PC is made of __________(a) Cache(b) Dynamic RAM(c) Static RAM(d) Both cache and dynamic RAMThis question was posed to me during a job interview.This intriguing question originated from Random Access Memory topic in portion Memory Devices of Digital Circuits |
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Answer» The correct OPTION is (d) Both cache and dynamic RAM |
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| 83. |
The DRAM stores its binary information on __________(a) MOSFET(b) Transistor(c) Capacitor(d) BJTThe question was posed to me in an interview.The question is from Random Access Memory in chapter Memory Devices of Digital Circuits |
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Answer» Correct answer is (c) CAPACITOR |
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| 84. |
The dynamic RAM offers __________(a) High power consumption, large storage capacity(b) Reduced power consumption, large storage capacity(c) Reduced power consumption, short storage capacity(d) High power consumption, short storage capacityThis question was posed to me by my school principal while I was bunking the class.My question is based upon Random Access Memory in chapter Memory Devices of Digital Circuits |
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Answer» CORRECT answer is (b) Reduced power consumption, large storage capacity For EXPLANATION I would say: The dynamic RAM offers reduced power consumption and large storage capacity in a SINGLE memory chip. With the AVAILABILITY of such high packing density memory ICs, the capacity of memory will CONTINUE to grow. However, it’s access time is more and thus operation is slow. |
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| 85. |
What is the disadvantage of MOS capacitor in DRAM?(a) It can’t hold the data till a long period(b) It doesn’t holds the charge till a long period(c) It is highly densed(d) It is not flexibleThe question was posed to me by my school teacher while I was bunking the class.My doubt is from Random Access Memory topic in portion Memory Devices of Digital Circuits |
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Answer» The correct answer is (b) It doesn’t holds the charge till a long PERIOD |
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| 86. |
DRAM uses of integrated MOS capacitors as _______ instead of a flip-flop.(a) Storage cell(b) Memory cell(c) Dynamic cell(d) Static cellThe question was asked during an internship interview.My question is from Random Access Memory in section Memory Devices of Digital Circuits |
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Answer» Right answer is (b) Memory cell |
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| 87. |
Most modern operating systems employ a method of extending RAM capacity, known as __________(a) Magnetic memory(b) Virtual memory(c) Storage memory(d) Static memoryThe question was posed to me in unit test.My question comes from Random Access Memory topic in chapter Memory Devices of Digital Circuits |
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Answer» The correct choice is (b) VIRTUAL memory |
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| 88. |
The memory size of DRAM is ____________(a) 1 to 100 MB(b) 512 to 1024 MB(c) 64 to 512 MB(d) 16 to 256 MBThe question was posed to me during an internship interview.Origin of the question is Random Access Memory in chapter Memory Devices of Digital Circuits |
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Answer» Right answer is (d) 16 to 256 MB |
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| 89. |
Dynamic RAM is more preferable than static RAM, why?(a) DRAM is of the lowest cost, lowest density(b) DRAM is of the highest cost, reduced size(c) DRAM is of the lowest cost, highest density(d) DRAM is more flexible and lowest storage capacityI got this question during an interview.I need to ask this question from Random Access Memory topic in section Memory Devices of Digital Circuits |
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Answer» Correct answer is (c) DRAM is of the lowest cost, highest density |
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| 90. |
In TMS 4016, the data in/data out are ______________(a) Unidirectional(b) Parallel(c) Serial(d) BidirectionalThis question was addressed to me in class test.This interesting question is from Random Access Memory in portion Memory Devices of Digital Circuits |
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Answer» CORRECT CHOICE is (d) Bidirectional The EXPLANATION is: In TMS 4016, the data in/data out are bidirectional TERMINAL. It means that the input/output can be transmitted or received through the same terminal. |
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| 91. |
What types of arrangements a TMS 4016 has?(a) 1024 * 4(b) 1024 * 8(c) 2048 * 4(d) 2048 * 8This question was addressed to me during an online exam.The query is from Random Access Memory topic in section Memory Devices of Digital Circuits |
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Answer» Correct ANSWER is (d) 2048 * 8 |
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| 92. |
How many address inputs are available in TMS 4016?(a) 10(b) 9(c) 12(d) 11This question was posed to me during an online exam.This question is from Random Access Memory in chapter Memory Devices of Digital Circuits |
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Answer» Right choice is (d) 11 |
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| 93. |
Which of the following IC implements the static MOS RAM?(a) TMS 4015(b) TMS 4014(c) TMS 4016(d) TMS 2114I had been asked this question in my homework.I'd like to ask this question from Random Access Memory topic in section Memory Devices of Digital Circuits |
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Answer» Right CHOICE is (c) TMS 4016 |
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| 94. |
Which one of the following IC is of 4KB?(a) IC 7488(b) IC 7489(c) IC 7487(d) IC 2114I had been asked this question in semester exam.My question comes from Random Access Memory in section Memory Devices of Digital Circuits |
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Answer» Correct ANSWER is (d) IC 2114 |
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| 95. |
The first practical form of Random Access Memory (RAM) was the ____________(a) Cathode tube(b) Data tube(c) Memory tube(d) Select tubeI had been asked this question in homework.Question is from Random Access Memory in division Memory Devices of Digital Circuits |
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Answer» Correct option is (c) Memory tube |
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| 96. |
Magnetic-core memory was invented in ____________(a) 1946(b) 1948(c) 1947(d) 1945The question was posed to me in class test.My question is taken from Random Access Memory topic in chapter Memory Devices of Digital Circuits |
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Answer» Correct option is (c) 1947 |
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| 97. |
Which of the following RAM is volatile in nature?(a) SRAM(b) DRAM(c) EEPROM(d) Both SRAM and DRAMThe question was asked during an internship interview.My question is taken from Random Access Memory topic in chapter Memory Devices of Digital Circuits |
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Answer» Right option is (d) Both SRAM and DRAM |
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| 98. |
Data is written in IC 7489 through ____________(a) Chip select(b) Enable(c) Data input(d) Memory enableThe question was asked by my school teacher while I was bunking the class.I would like to ask this question from Random Access Memory topic in chapter Memory Devices of Digital Circuits |
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Answer» CORRECT CHOICE is (c) Data input Easy explanation: Data can be written into the memory via the data inputs by supplying an address to the SELECT inputs and holding both the memory ENABLE and write enable LOW. |
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| 99. |
IC 7489 is of ____________(a) 32 bit(b) 64 bit(c) 512 bit(d) 1024 bitThe question was posed to me by my college director while I was bunking the class.Asked question is from Random Access Memory topic in division Memory Devices of Digital Circuits |
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Answer» Correct ANSWER is (B) 64 bit |
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| 100. |
The flip-flop in static memory cell can be constructed using ____________(a) Capacitor or MOSFET(b) FET or JFET(c) Capacitor or BJT(d) BJT or MOSFETI have been asked this question in semester exam.The origin of the question is Random Access Memory in portion Memory Devices of Digital Circuits |
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Answer» Correct OPTION is (d) BJT or MOSFET |
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